MIL-PRF-19500-399 Semiconductor Device, Transistor, Npn, Silicon, Switching Type 2N3960 And 2N3960Ub Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, A...This specification covers the performance requirements for NPN silicon, switching transistors. Four levels of product assurance are provided for each device type and two levels for unencapsulated die as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/399F

* TABLE III. Groups B, C, and E delta end-point inspection measurements. 1/ 2/ 3/ 4/

Step

Inspection

MIL-STD-750

Symbol

Limit

Unit

Method

Conditions

Min

Max

Bias condition A, VCE = 10 V dc,

Collector to emitter

100 percent of initial

3041

ĆICEX2

cutoff current

value or 2 nA dc,

VBE = 2.0 V dc

whichever is greater;

VCE = 1.0 V dc; IC = 10 mA dc;

Forward current

3076

�20 percent change

ĆhFE2 5/

transfer ratio

from initial value

pulsed (see 4.5.1)

The delta measurements for table VIa (JANS) of MIL-PRF-19500 are subgroup 4 and 5, see table III herein, all

steps.

The delta measurements for group B of 4.4.2.2 herein (JAN, JANTX, and JANTXV) are: Step 1, 2, and 3 of

4.4.2.2, see table III herein, all steps.

The delta measurements for table E-VII of MIL-PRF-19500, Subgroup 6, all steps:

The delta measurements for table E-IX of MIL-PRF-19500 are: Subgroups 1 and 2, see table III herein, all

steps.

Devices which exceed the table I limits herein for this test shall not be accepted.