MIL-PRF-19500-399 Semiconductor Device, Transistor, Npn, Silicon, Switching Type 2N3960 And 2N3960Ub Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, A...This specification covers the performance requirements for NPN silicon, switching transistors. Four levels of product assurance are provided for each device type and two levels for unencapsulated die as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/399F

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I

herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. (See 4.4.2.2 for JAN,

JANTX, and JANTXV group B testing). Electrical measurements (end-points) shall be in accordance with table I,

subgroup 2 and delta requirements shall be in accordance with table III herein as specified in the footnotes for table

III.

4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.

Subgroup

Method

Conditions

1037

VCB = 10 V dc, 2,000 cycles, tON = tOFF = 3 minutes, PD(ON) = PD max

rated per 1.3; PD(OFF) = 0.

VCB = 10 V dc, 1,000 hours at 75 percent of maximum rated power shall be

1027

applied and ambient temperature adjusted to achieve TJ = +150�C minimum.

n = 45, c = 0.

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the

event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot

or from another assembly lot from the same wafer lot. If the new "assembly lot" option is exercised, the failed

assembly lot shall be scrapped.

Step

Method

Condition

Steady-state life: Test condition B, 1000 hours minimum, VCB = 10 V dc, power

1026

shall be applied to the device and TA adjusted to achieve TJ = +150�C minimum,

and minimum PD = 75 percent of max rated PT (see 1.3 herein); n = 45, c = 0.

1048

HTRB: Test condition A, 48 hours minimum. n = 45, c = 0.

1032

High- temperature life (non-operating), TA = +200�C, t = 340 hours, n = 22, c = 0.

4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements:

For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from

each wafer in the lot) from each wafer lot. For JANS samples shall be selected from each inspection lot.

See MIL-PRF-19500.

Shall be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,

conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high

temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and

JANTXV) may be pulled prior to the application of final lead finish.

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta

requirements shall be in accordance with table I, subgroup 2 and the delta requirements in accordance with the notes

of table III herein.