MIL-PRF-19500-399 Semiconductor Device, Transistor, Npn, Silicon, Switching Type 2N3960 And 2N3960Ub Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, A...This specification covers the performance requirements for NPN silicon, switching transistors. Four levels of product assurance are provided for each device type and two levels for unencapsulated die as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/399F

4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table E-IV

Measurement

of MIL-PRF-19500)

JANS level

JANTX and JANTXV levels

Thermal impedance

Method 3131 of MIL-STD-750 (see

4.3.3).

4.3.3). (1)

Not applicable

ICEX2 and hFE2

VCB = 12 V, 48 hours minimum.

ICEX2 and hFE2

ĆICEX2 = 100 percent of initial value

or 2 nA dc, whichever is greater;

ĆhFE2 = �20 percent.

See 4.3.1

Subgroup 2 of table I herein;

Subgroups 2 and 3 of table I herein;

ĆICEX2 = 100 percent of initial value or 2

ĆICEX2 = 100 percent of initial value

nA dc, whichever is greater;

or 2 nA dc, whichever is greater;

ĆhFE2 = �20 percent.

Required.

(1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in

screening requirements for JANTX and JANTXV level devices.

4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 V dc. Power shall be applied

to achieve TJ = +135�C minimum using a minimum PD = 75 percent of PT maximum. TA = room ambient as defined

in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in data criteria (hours, bias

conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification

demonstrating equivalence is required. In addition, the manufacturing site s burn-in data and performance history will

be essential criteria for burn-in modification approval. Method 3100 of MIL-STD-750 to measure TJ shall be used.

4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.

4.3.3 Thermal response (ĆVBE measurements). The ĆVBE measurements shall be performed in

accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining VH, VCE, IM, IH, tH,

and tMD. The ĆVBE limit used in screen 3c and table I, subgroup 2 shall be set statistically by the supplier over several

die lots and submitted to the qualifying activity for approval.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened

devices shall be submitted to, and pass, the requirements of group A1 and A2 inspection only (table E-VIb, group B,

subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2).