MIL-PRF-19500-399 Semiconductor Device, Transistor, Npn, Silicon, Switching Type 2N3960 And 2N3960Ub Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, A...This specification covers the performance requirements for NPN silicon, switching transistors. Four levels of product assurance are provided for each device type and two levels for unencapsulated die as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/399F

Die size:

.016 x .016 inch (0.41 x 0.41 mm).

Die thickness:

.008 �.0016 inch (0.20 �0.041 mm).

Base pad:

.0027 x .0027 inch 0.069 x 0.069 mm).

Emitter pad:

.0027 x .0027 inch.

Back metal:

Gold, 6500 �1950 Ang.

Top metal:

Aluminum, 17500 �2500 Ang.

Back side:

Collector.

SiO2, 7500 �1500 Ang.

Glassivation:

FIGURE 3. JANHC and JANKC (A-version) die dimensions.