MIL-PRF-19500-406 Semiconductor Devices, Diode, Silicon, Voltage Regulator, Types 1N4460, 1N4460C, 1N4460D Through 1N4496, 1N4496C, 1N4496D, And 1N6485, 1N6485C, 1N6485D Through 1N6491, 1N6491C, 1N6491D, 1N4460Us, 1N4460Cus, 1N4460Dus Through 1N4496Us, 1N4496Cus, 1N4496Dus, And 1N6485Us, 1N6485Cus, 1N6485Dus Through 1N6491Us, 1N6491Cus, 1N6491Dus, 1N4460Um Through 1N4496Um, Plus C And D ...This specification covers the performance requirements for micro-miniature 1.5 watt silicon, low leakage, voltage regulator diodes with tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500.

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MIL-PRF-19500/406L

TABLE II. Group E inspection (all quality levels).

MIL�STD�750

Inspection 1/

Sampling plan

Method

Conditions

Subgroup 1

22 devices c = 0

Thermal shock

1056

20 cycles, condition D except low temperature shall be

achieved using liquid nitrogen (-195�C).

Perform a visual inspection for cracked glass.

-65�C to +175�C, 500 cycles.

Temp cycling

1051

Hermetic seal

1071

Fine leak is applicable for UM version devices only.

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2.

Subgroup 2

22 devices c = 0

Steady-state intermittent

1037

IZ = IZ2 (column 8 of table III) at TA = room ambient for

operating life

10,000 cycles. No forced air cooling on the device shall

be permitted.

Electrical measurements

See table I, subgroup 2.

Subgroup 4

Thermal impedance

See MIL�PRF�19500.

Sample size

curves

N/A

Subgroups 5 and 6

Not applicable

Subgroup 8

45 devices c=0

Resistance to glass

1057

Condition B. Step stress to destruction by increased

cracking (Not applicable

cycles or up to a maximum of 25 cycles.

for UM devices).

1/ A separate sample may be pulled for each test.