MIL-PRF-19500-406 Semiconductor Devices, Diode, Silicon, Voltage Regulator, Types 1N4460, 1N4460C, 1N4460D Through 1N4496, 1N4496C, 1N4496D, And 1N6485, 1N6485C, 1N6485D Through 1N6491, 1N6491C, 1N6491D, 1N4460Us, 1N4460Cus, 1N4460Dus Through 1N4496Us, 1N4496Cus, 1N4496Dus, And 1N6485Us, 1N6485Cus, 1N6485Dus Through 1N6491Us, 1N6491Cus, 1N6491Dus, 1N4460Um Through 1N4496Um, Plus C And D ...This specification covers the performance requirements for micro-miniature 1.5 watt silicon, low leakage, voltage regulator diodes with tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500.

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MIL-PRF-19500/406L

4.3 Screening (JANS, JANTXV and JANTX levels only). Screening shall be in accordance with table E-IV of

MIL�PRF�19500, and as specified herein. The following measurements shall be made in accordance with table I herein.

Devices that exceed the limits of table I herein shall not be acceptable.

Screen

Measurements

(see table E-IV of

JANS level

JANTX and JANTXV levels

MIL�PRF�19500)

Not applicable

(1) 3c

Thermal impedance, see 4.3.1

Not applicable

IR1 and VZ (1N4466 thru 1N4496 only)

Required for device > 10 V dc.

Not applicable

IR1 and VZ, ĆIR1 ≤ �100 percent of initial

IR1 and VZ

reading or 50 nA, whichever is greater.

ĆVZ ≤ �2 percent of initial reading (2)

Required see 4.3.2

Scope display see 4.5.7

Subgroup 2 of table I herein;

ĆIR1 (max) ≤ �100 percent of initial reading or

Subgroups 2 and 3 of table I herein;

ĆIR1 (max) ≤ �100 percent of initial reading or

25 percent of column 12 in table III (1N6485 �

1N4466); 50 nA (1N4467 � 1N4496),

whichever is greater; ĆVZ ≤ �2 percent of initial

1N4466); 50 nA (1N4467 � 1N4496),

whichever is greater; ĆVZ ≤ �2 percent of initial

reading

(1) Shall be performed any time after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to be

repeated in screening requirements.

4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method

3101 or 4081 of MIL�STD�750, as applicable, using the guidelines in that method for determining IM, IH, tH, tSW (VC

and VH where appropriate). See table II, group E, subgroup 4 herein.

4.3.2 Free air power burn-in conditions. Power burn-in conditions are as follows (see 4.5.6): TA = 75�C maximum.

Test conditions in accordance with method 1038 of MIL-STD-750, condition B. Adjust IZ or TA to achieve the required

TJ, and IZ(min) shall be ≥ 50 percent of column 8 of table III. TJ = 135�C minimum. With approval of the qualifying

activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, mounting conditions) may be used

for JANTX and JANTXV quality levels. A justification demonstrating equivalence is required. In addition, the

manufacturing site's burn-in data and performance history will be essential criteria for burn-in modification approval.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL�PRF�19500 and as

specified herein.

4.4.1 Group A inspection. Group A inspection shall be in accordance with MIL�PRF�19500 and table I herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E-VIa (JANS) and E-VIb (JAN, JANTX, and JANTXV) of MIL�PRF�19500.

Electrical measurements (end-points) shall be in accordance with the applicable inspections of table I, subgroup 2

herein. ZθJX is an end-point for these subgroups: B2 and B3 (JAN, JANTX, and JANTXV product levels only).