MIL-PRF-19500-406 Semiconductor Devices, Diode, Silicon, Voltage Regulator, Types 1N4460, 1N4460C, 1N4460D Through 1N4496, 1N4496C, 1N4496D, And 1N6485, 1N6485C, 1N6485D Through 1N6491, 1N6491C, 1N6491D, 1N4460Us, 1N4460Cus, 1N4460Dus Through 1N4496Us, 1N4496Cus, 1N4496Dus, And 1N6485Us, 1N6485Cus, 1N6485Dus Through 1N6491Us, 1N6491Cus, 1N6491Dus, 1N4460Um Through 1N4496Um, Plus C And D ...This specification covers the performance requirements for micro-miniature 1.5 watt silicon, low leakage, voltage regulator diodes with tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500.

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MIL-PRF-19500/406L

4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL�PRF�19500.

Subgroup

Method

Condition

0�C to +100�C, 25 cycles, n = 22, c = 0.

1056

-55�C to +175�C, 100 cycles, n = 22, c = 0.

1051

1071

Fine leak and gross leak shall be performed for UM version devices. Test

condition E shall be performed for non-UM version devices. NOTE: For non-

transparent devices, hermetic seal may be performed after electrical

measurements.

IZ = 80 percent of column 8 of table III at TA = room ambient as defined in the

1037

general requirements of 4.5 of MIL-STD-750; for 2,000 cycles.

IZ = 50 percent of column 8 of table III minimum; adjust either TA, and or IZ to

1027

achieve TJ minimum. Temporary leads may be added for surface mount devices,

n = 45, c = 0.

Option 1: TA = +100�C max; TJ = +275�C minimum; t = 96 hours. n = 22, c = 0.

Option 2: TA = +100�C max; TJ = +175�C minimum; t = 1,000 hours. n = 45, c = 0.

4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV of MIL�PRF�19500).