MIL-PRF-19500-406 Semiconductor Devices, Diode, Silicon, Voltage Regulator, Types 1N4460, 1N4460C, 1N4460D Through 1N4496, 1N4496C, 1N4496D, And 1N6485, 1N6485C, 1N6485D Through 1N6491, 1N6491C, 1N6491D, 1N4460Us, 1N4460Cus, 1N4460Dus Through 1N4496Us, 1N4496Cus, 1N4496Dus, And 1N6485Us, 1N6485Cus, 1N6485Dus Through 1N6491Us, 1N6491Cus, 1N6491Dus, 1N4460Um Through 1N4496Um, Plus C And D ...This specification covers the performance requirements for micro-miniature 1.5 watt silicon, low leakage, voltage regulator diodes with tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500.

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MIL-PRF-19500/406L

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL�PRF�19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying

activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as

specified in MIL�PRF�19500, and as follows:

End-cap.

IZT

Zener test current.

Surface mount case outline, square end-cap.

Surface mount case outline, DPC package.

Knee impedance.

αVZ

Temperature coefficient.

3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL�PRF�

19500, and on figures 1 and 2 herein.

3.4.1 Diode construction (except UM version). All devices shall be metallurgically bonded, double plug

construction, thermally matched, and non-cavity in accordance with the requirements of MIL�PRF�19500. US

version devices shall be structurally identical to the axial leaded type except for lead attachment.

3.4.1.1 Metallurgical bond for diodes with VZ greater than 6.8 V dc (except UM version). These devices shall be

constructed utilizing category I metallurgical bonds for diodes with VZ greater than 6.8 V dc as defined in

MIL�PRF�19500.

3.4.1.2 Metallurgical bond for diodes with VZ less than or equal to 6.8 V dc (except UM version). These devices

shall be constructed utilizing category I or category III metallurgical bonds as defined in MIL�PRF�19500.

3.5 Marking. Marking shall be in accordance with MIL�PRF�19500.

3.5.1 Marking of US devices. US devices shall be marked with a cathode band as a minimum; or a minimum of

three evenly spaced contrasting color dots around the periphery of the cathode end may be used. At the option of

the manufacturer, US devices may include laser marking on an end-cap, to include part number and lot date code for

all levels. JANS devices which are laser marked shall also include serialization. The prefixes JAN, JANTX, JANTXV,

or JANS may be abbreviated as J, JX, JV, or JS, respectively. (For example: The part number may be reduced to

JS4460). All device marking, except for polarity and serial numbers, shall also appear on the unit package used as

the initial protection for delivery.

3.5.2 Marking of UM version devices. For UM version devices only, all marking shall be on lid to include part

number, date code, serial number and cathode end.

3.6 Lead finish. Lead finish shall be solderable in accordance with MIL�PRF�19500, MIL�STD�750, and herein.

When solder alloy is used for lead finish the maximum lead temperature shall be 175�C max. Where a choice of lead

finish is desired, it shall be specified in the acquisition document (see 6.2).

3.7 Polarity. The polarity of all types shall be indicated with a contrasting color band to denote the cathode end.

For UM devices, a line on the lid shall denote the cathode end.