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MIL-PRF-19500-426 Semiconductor Device, Transistor, Pnp, Silicon, Amplifier Type 2N4957 And 2N4957Ub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, ...This specification covers the performance requirements for PNP silicon, VHF-UHF amplifier transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/426H
* TABLE II. Group D inspection and end-point limits.
MIL-STD-750
Limits
Inspection 1/ 2/ 3/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1 4/
Neutron Irradiation
1017
Neutron exposure Vces = 0 V
Breakdown voltage,
3011
V(BR)CEO
V dc
Bias condition D; IC = -1.0 mA dc, IB = 0 A
-30
collector to emitter
ηA dc
Collector to base cutoff
3036
ICBO1
Bias condition D, VCB = -20 V, IE = 0 A
-200
current
Collector to base cutoff
3036
ICBO2
ľA dc
Bias condition D, VCB = -30 V
-200
current
Emitter to base cutoff
3061
IEBO
ľA dc
Bias condition D, VEB = -3 V
-200
current
Forward-current transfer
3076
[hFE1] 5/
[7.5]
VCE = -10 V dc, IC = -0.5 mA dc
ratio
Forward-current transfer
3076
[hFE2] 5/
[10]
VCE = -10 V dc, IC = -2.0 mA dc
ratio
Forward-current transfer
3076
[hFE3] 5/
[15]
165
VCE = -10 V dc, IC = -5.0 mA dc
ratio
Subgroup 2
Steady-state total dose
1019
Gamma exposure VCES = -24 V
irradiation
Breakdown voltage,
3011
V(BR)CEO
V dc
Bias condition D; IC = -1.0 mA dc, IB = 0 A
-30
collector to emitter
ηA dc
Collector to base cutoff
3036
ICBO1
Bias condition D, VCB = -20 V, IE = 0 A
-200
current
Collector to base cutoff
3036
ICBO2
ľA dc
Bias condition D, VCB = -30 V
-200
current
Emitter to base cutoff
3061
IEBO
ľA dc
Bias condition D, VEB = -3 V
-200
current
Forward-current transfer
3076
[hFE1] 5/
[7.5]
VCE = -10 V dc, IC = -0.5 mA dc
ratio
Forward-current transfer
3076
[hFE2] 5/
[10]
VCE = -10 V dc, IC = -2.0 mA dc
ratio
Forward-current transfer
3076
[hFE3] 5/
[15]
165
VCE = -10 V dc, IC = -5.0 mA dc
ratio
1/
Tests to be performed on all devices receiving radiation exposure.
2/
For sampling plan, see MIL-PRF-19500.
3/
Electrical characteristics apply to all device types unless otherwise noted.
4/
See 6.2.e herein.
5/
See method 1019, of MIL-STD-750, for how to determine [hFE] by first calculating the delta(1/hFE) from the pre and
post-radiation hFE. Notice that [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can
never exceed the pre-radiation minimum hFE that it is based upon.
13



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