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MIL-PRF-19500-426 Semiconductor Device, Transistor, Pnp, Silicon, Amplifier Type 2N4957 And 2N4957Ub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, ...This specification covers the performance requirements for PNP silicon, VHF-UHF amplifier transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/426H
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened
devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table E-VIB, group B,
subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table E-VIA (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. (See 4.4.2.2 for JAN,
JANTX, and JANTXV group B testing). Electrical measurements (end-points) shall be in accordance with table I,
subgroup 2 and delta requirements shall be in accordance with table III herein as specified in the footnotes for
* 4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
VCB = -10 V dc, TA = room ambient as defined in the general requirements of 4.5 of
*
B4
1037
MIL-STD-750, t(on) = t(off) = 3 minutes, PD = maximum rated PT (see 1.3) during the
"on" cycle. PD = 0 during the "off" cycle.
*
B5
1027
1,000 hours minimum, VCB = -10 V dc, power shall be applied to achieve TJ =
+150°C minimum using a minimum of PD = 100 percent of maximum rated PT as
defined in 1.3; in addition, adjust TA to achieve TJ. n = 45 devices, c = 0.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic
failures during CI shall be analyzed to the extent possible to identify root cause and corrective action.
Step
Method
Condition
Steady-state life: 1,000 hours minimum, VCB = -10 V dc, power shall be applied to achieve
1
1026
TJ = +150°C minimum using a minimum of PD = 100 percent of maximum rated PT as defined
in 1.3; in addition, adjust TA to achieve TJ. n = 45 devices, c = 0.
Blocking life, TA = +150°C, VCB = 80 percent of rated voltage, 48 hours minimum.
2
1048
n = 45 devices, c = 0.
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
3
1032
9



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