MIL-PRF-19500-426 Semiconductor Device, Transistor, Pnp, Silicon, Amplifier Type 2N4957 And 2N4957Ub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, ...This specification covers the performance requirements for PNP silicon, VHF-UHF amplifier transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/426H

* TABLE IV. Group E inspection (all quality levels) - for qualification or re-qualification only.

Inspection

MIL-STD-750

Qualification

Method

Conditions

Subgroup 1

45 devices

c=0

Temperature cycling

1051

Test condition C, 500 cycles.

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 and table III herein.

Subgroup 2

45 devices

c=0

Intermittent life

1037

VCB = -10 V dc, 6,000 cycles, t(on) = t(off) = 3 min.

PD = maximum rated PT (see 1.3) during the "on"

cycle. PD = 0 during the "off" cycle.

Electrical measurements

See table I, subgroup 2 and table III herein.

Subgroup 4

sample size

N/A

Thermal impedance curves

See MIL-PRF-19500, table E-IX, subgroup 4.

Subgroup 5

Not applicable

Subgroup 6

11 devices

ESD

1020

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.