MIL-PRF-19500-426 Semiconductor Device, Transistor, Pnp, Silicon, Amplifier Type 2N4957 And 2N4957Ub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, ...This specification covers the performance requirements for PNP silicon, VHF-UHF amplifier transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/426H

4.3 Screening (JANTX, JANTXV and JANS levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table IV

Measurement

JANS level

JANTX and JANTXV levels

Thermal impedance, method 3131 of

MIL-STD-750 (see 4.3.3)

Not applicable

ICBO1, hFE3

24 hours minimum

ICBO1; hFE3;

ICBO1 ,hFE3

ĆICBO1 = 100 percent of initial value

or -10 nA dc, whichever is greater.

ĆhFE3 = �20 percent

See 4.3.1, 240 hours minimum

See 4.3.1, 80 hours minimum

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

ĆICBO1= 100 percent of initial value

ĆICBO1= 100 percent of initial value or

or -10 nA dc, whichever is greater;

-10 nA dc, whichever is greater;

ĆhFE3 = �20 percent

* 4.3.1 Power burn-in. Power burn-in conditions are as follows: TA = room ambient as defined in the general

requirements of 4.5 of MIL-STD-750, VCB = -10 - -20 V dc. A power dissipation of PD = 100 percent of PT maximum

as defined in 1.3 shall be used.

4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.

4.3.3 Thermal impedance (ĆVBE measurements). The ĆVBE measurements shall be performed in accordance with

method 3131 of MIL-STD-750 using the guidelines in that method for determining VH, VCE, IM, IH, tH, and tMD. The

ĆVBE limit used in screen 3c and table I, subgroup 2 shall be set statistically by the supplier over several die lots and

submitted to the qualifying activity for approval.