MIL-PRF-19500-426 Semiconductor Device, Transistor, Pnp, Silicon, Amplifier Type 2N4957 And 2N4957Ub, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, ...This specification covers the performance requirements for PNP silicon, VHF-UHF amplifier transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/426H

Values:

C1, C7

= 1-10 pF (variable air-piston type capacitors)

C2, C4, C6

= 500 pF (button type capacitors)

C3, C8

= .4 - 6.0 pF (variable air-piston type capacitors)

= 1,000 pF

= 2.7 kΩ

R2, R4 = 1 kΩ

= 20 kΩ

L1 = silver-plated brass bar, 1.0 inch (25.4 mm) long by .25 inch (6.35 mm) o.d. (straight bar).

L2 = silver-plated brass bar, 1.5 inches (38.1 mm) long by .25 inch (6.35 mm) o.d. Tap is .25 inch (6.35 mm)

from collector (straight bar).

L3 = One-half turn of AWG number 16 wire, loop o.d. approximately .5 inch (12.7 mm), located .25 inch (6.35 mm)

from, and parallel to L2.

L4 = 0.22 �H.

The noise source is a hot-cold body, (all type 70 or equivalent) with a test receiver (all type 70 or equivalent).

FIGURE 5. RF amplifier for power gain and noise figure tests.