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MIL-PRF-19500-445 Semiconductor Device, Diode, Silicon, Switching Types 1N5712, 1N5712-1 And 1N5712Ur-1, Jan, Jantx, Jantxv, Janj, Jans, Janhc And Jankc \(S/S By Mil-Prf-19500/444\)This specification covers the performance requirements for Schottky barrier diodes. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two level of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/445D
TABLE I. Group A inspection.
MIL-STD-750
Limits
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2
Forward voltage
4011
0.410
V dc
IF = 1 mA dc
VF1
Forward voltage
4011
1.0
V dc
IF = 35 mA dc
VF2
Reverse current
4016
150
nA dc
DC method; VR = 16 V dc
IR1
Breakdown voltage
4021
20
---
V dc
IR = 10 µA dc
V(BR)1
°C/W
3101
See 4.4.1
Thermal impedance
ZΘJX
1N5712
100
1N5712-1, 1N5712UR-1
40
Subgroup 3
High temperature
TA = +150°C
operation:
µA dc
---
150
Reverse current
4016
IR2
DC method; VR = 16 V dc
Low temperature
TA = -55°C
operation:
---
0.55
V dc
Forward voltage
4011
VF3
IF = 1 mA dc
Forward voltage
4011
1.0
V dc
IF = 35 mA dc
VF4
Breakdown voltage
4021
20
---
V dc
IR = 10 µA dc
V(BR)2
Subgroup 4
Capacitance
4001
C
---
VR = 0 V dc; f = 1 MHz;
Vsig = 50 mV(pk)
maximum
1N5712
1.2
pF
1N5712-1, 1N5712UR-1
2.0
pF
τCL
Effective carrier
(see DESC drawing
100
ps
lifetime (see 4.5.2)
C68001)
Subgroups 5, 6, and 7
Not applicable
1/ For sampling plan, see MIL-PRF-19500.
11



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