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MIL-PRF-19500-445 Semiconductor Device, Diode, Silicon, Switching Types 1N5712, 1N5712-1 And 1N5712Ur-1, Jan, Jantx, Jantxv, Janj, Jans, Janhc And Jankc \(S/S By Mil-Prf-19500/444\)This specification covers the performance requirements for Schottky barrier diodes. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two level of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/445D
Dimensions
Inches
Millimeters
Ltr
Min
Max
Min
Max
Notes
A
.0029
.0035
.074
.089
B
.0130
.0170
.330
.430
NOTES:
1.  Dimensions are in inches.
2.  Metric equivalents are given for general information only.
3.  Element evaluation accomplished utilizing TO-5 package.
4.  The physical characteristics of the die are:
Metallization:
Top (anode): Al.
Back (cathode): Au.
Al thickness: 25,000 Å minimum.
Gold thickness: 4,000 Å minimum.
Chip thickness: .010 inches (.25 mm) ±.002 inches (.05 mm).
FIGURE 3. Physical dimensions, JANHCA and JANKCA die.
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