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MIL-PRF-19500-445 Semiconductor Device, Diode, Silicon, Switching Types 1N5712, 1N5712-1 And 1N5712Ur-1, Jan, Jantx, Jantxv, Janj, Jans, Janhc And Jankc \(S/S By Mil-Prf-19500/444\)This specification covers the performance requirements for Schottky barrier diodes. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two level of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/445D
4.3.2 Screening (JANHC or JANKC). Screening of JANC die shall be in accordance with MIL-PRF-19500. As a minimum, die shall
be 100-percent probed in accordance with group A, subgroup 2 (excluding thermal impedance).
4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with MIL-STD-750,
method 3101 to identify and remove atypical devices.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I herein. The
following test conditions shall be used for ZθJX, group A inspection:
a.
IM measurement current ................................. 1 mA to 10 mA.
b.
IH forward heating current................................ 50 mA to 200 mA.
c.
tH heating time ................................................ 10 ms.
tMD measurement delay time ........................... 70 µs maximum.
d.
4.4.2 Group B inspection . Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VIa (for JANS) and table VIb (for JAN, JANTX and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-
points) shall be in accordance with table I, group A, subgroup 2 herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
B4
1037
IO = 33 mA; VR = 16 V(pk); f = 60 Hz; TA = room ambient as defined in 4.5 of MIL-STD-750; ton = toff
= 3 minutes minimum for 2,000 cycles; (see 4.5.1).
High temperature reverse bias (HTRB), test condition A, VR = 12.8 V; TA = +150°C.
B5
1038
RθJL = 250°C/W for type 1N5712-1 and RθJL = 700°C/W for type 1N5712; .375 inch or (9.52 mm) lead
B6
3101
length (nonsurface mount). RθJEC = 100°C/W (surface mount).
or
4081
4.4.2.2 Group B inspection, table VIb (JAN, JANTX, JANTXV, and JANJ) of MIL-PRF-19500.
Subgroup
Method
Condition
High temperature reverse bias (HTRB), test condition A, VR = 12.8 V; TA = +150°C.
B3
1038
B4
See 4.5.4.
B5
Not applicable.
TA = +150°C.
B6
1032
9



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