MIL-PRF-19500-477 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, Types 1N5802, 1N5804, 1N5806, 1N5807, 1N5809, And 1N5811, 1N5802Us, 1N5804Us, 1N5806Us, 1N5807Us, 1N5809Us, And 1N5811Us, 1N5802Urs, 1N5804Urs, 1N5806Urs, 1N5807Urs, 1N5809Urs, And 1N5811Urs, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, fast recovery, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/477K

* TABLE II. Group E inspection (all quality levels) for qualification and requalification only.

Inspection

MIL-STD-750

Sampling

plan

Method

Conditions

Subgroup 1

45 devices

c=0

Thermal shock (liquid to

1056

20 cycles, except low temperature shall be achieved using

liquid)

liquid nitrogen (-195�C). Perform a visual for cracked

glass.

-65�C to +175�C, 500 cycles.

Temperature cycling (air

1051

to air)

Hermetic seal 1/

1071

Electrical measurement

See table I, subgroup 2 and table III, steps 1 and 2.

Subgroup 2

22 devices

c=0

t = 1,000 hours; TA = +150�C; VR dc = 80 - 85 percent rated

Steady-state dc blocking

1048

life

VRWM (see 1.3.2).

Electrical measurement

See table I, subgroup 2 herein, except ZθJX need not to be

performed, and table III, steps 1 and 2 herein. For

irradiated devices, include trr as an end-point

measurement.

Sample size

Subgroup 4

N/A

Thermal impedance

See MIL-PRF-19500.

curves

Subgroup 5

Not applicable