INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
MILPRF19500/504F
shall be completed by 14 January 2013.
14 October 2012
SUPERSEDING
MILPRF19500/504E
18 November 2008
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON,
TYPES 2N6283 AND 2N6284, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MILPRF19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon power Darlington transistors.
Three levels of product assurance are provided for each encapsulated device type as specified in MILPRF19500.
1.2 Physical dimensions. The device package style is TO204AA (similar to TO3) in accordance with figure 1.
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
PT
Types
VCBO
VCEO
VEBO
IC
IB
TJ and TSTG
RθJC
TC = +25°C TC = +100°C
Max
(1)
(2)
°C/W
°C
W
W
V dc
V dc
V dc
A dc
A dc
2N6283
175
87.5
80
80
7
20
0.5
0.857
65 to +200
2N6284
175
87.5
100
100
7
20
0.5
0.857
65 to +200
(1) Derate linearly at 1.17 W/°C above TC > +25°C.
(2) Derate linearly at .875 W/°C above TC > +100°C.
Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 432183990, or emailed to semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil.
AMSC N/A
FSC 5961
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