MIL-PRF-19500-504 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6283 And 2N6284, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon power Darlington transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/504F

4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E�IV of

MIL�PRF�19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Measurement

Screen (see table E�IV

JANTX and JANTXV levels only

3c (1)

Thermal impedance, see 4.3.1

ICEX1 and hFE1

See 4.3.2

See subgroup 2 of table I herein.

ĆICEX1 = 100 percent of initial value or 2 �A dc, whichever is greater.

ĆhFE1 = �40 percent of initial value.

(1) This test shall be performed anytime after temperature cycling, screen 3a, and does not need to be repeated

in screening requirements.

4.3.1 Thermal impedance. The thermal impedance measurements shall be performed in accordance with test

method 3131 of MIL�STD�750 using the guidelines in that test method for determining IM, IH, tH, tSW, (and VH where

appropriate). Measurement delay time (tMD) = 70 �s max. The thermal impedance limit used in screen 3c and

subgroup 2 of table I herein shall be set statistically by the supplier. See table II, subgroup 4 herein.

4.3.2 Power burn-in conditions. The power burn-in conditions shall be as follows: TJ = +162.5�C � 12.5�C;

VCE ≥ 10 V dc. NOTE: No heat sink or forced air cooling on the devices shall be permitted.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL�PRF�19500, and as

specified herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E�V of

MIL�PRF�19500 and table I herein. Electrical measurements (end-points) shall be in accordance with table I,

subgroup 2 herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E�VIB (JAN, JANTX, and JANTXV) of MIL�PRF�19500 and herein. Electrical

measurements (end-points) shall be in accordance with table I, subgroup 2 herein.

Subgroup

Method

Conditions

For solder die attach: VCE ≥ 10 V dc; TA ≤ +35�C, 2,000 cycles.

1037

For eutectic die attach: TA ≤ +35�C adjust PT to achieve TJ = +150�C minimum,

10237

VCE ≥ 10 V dc.

3131

Not applicable.