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MIL-PRF-19500-504 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6283 And 2N6284, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon power Darlington transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL–PRF–19500.

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MIL­PRF­19500/504F
TABLE I. Group A inspection.
Limit
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
Thermal impedance 2/
3131
See 4.3.1
°C/W
ZθJC
Collector to emitter
3011
Bias condition D, IC = 100 mA dc;
V(BR)CEO
breakdown voltage
pulsed (see 4.5.1)
2N6283
80
V dc
2N6384
100
V dc
Collector to emitter
3041
Bias condition D
1.0
mA dc
ICEO
cutoff current
2N6283
VCE = 40 V dc
2N6284
VCE = 50 V dc
Emitter to base
3061
2.5
mA dc
Bias condition D, VEB = 7 V dc
IEBO
cutoff current
Collector to emitter
3041
0.01
mA dc
Bias condition A, VBE = 1.5 V dc
ICEX1
cutoff current
2N6283
VCE = 80 V dc
2N6284
VCE = 100 V dc
Base emitter voltage
3066
2.8
V dc
Test condition B, VCE = 3 V dc;
VBE
(nonsaturated)
IC = 10 A dc
Base emitter voltage
3066
4.0
V dc
Test condition A, IC = 20 A dc;
VBE(sat)
(saturated)
IB = 200 mA dc; pulsed (see 4.5.1)
Collector to emitter
3071
3.0
V dc
IC = 20 A dc; IB = 200 mA dc;
VCE(sat)1
saturation voltage
pulsed (see 4.5.1)
Collector to emitter
3071
2.0
V dc
IC = 10 A dc; IB = 40 mA dc;
VCE(sat)2
saturation voltage
pulsed (see 4.5.1)
Forward-current
3076
1,500
VCE = 3 V dc; IC = 1 A dc;
hFE1
transfer ratio
pulsed (see 4.5.1)
Forward-current
3076
1,250
18,000
VCE = 3 V dc; IC = 10 A dc;
hFE2
transfer ratio
pulsed (see 4.5.1)
Forward-current
3076
500
VCE = 3 V dc; IC = 20 A dc;
hFE3
transfer ratio
pulsed (see 4.5.1)
See footnotes at end of table.
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