MIL-PRF-19500-504 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6283 And 2N6284, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon power Darlington transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/504F

TABLE I. Group A inspection � Continued.

Limit

Inspection 1/

Symbol

Unit

Method

Conditions

Min

Max

Subgroup 5 � Continued.

Safe operating area

3053

Load condition B,

(switching)

(clamped inductive load);

TA = +25�C; tr + tf ≤ 1.0 �s;

duty cycle ≤ 2 percent;

tp = 1 ms; (vary to obtain IC);

Rs = 0.1 Ω; RBB1 = 50 Ω;

VBB1 = 10 V dc; RBB2 = 100 Ω;

VBB2 = 1.5 V dc; VCC = 25 V dc;

IC = 20 A dc; RL ≤ 2 Ω; L = 5 mH

(Four coils in parallel, 20 mH

windings) (Triad c-48u or

equivalent).

2N6283

Clamp voltage = 80 +0, �5 V dc

2N6284

Clamp voltage = 100 +0, �5 V dc

Device fails if clamp voltage

not reached.

End-point electrical

See subgroup 2 herein.

measurements

Subgroups 6 and 7

Not applicable

For sampling plan, see MIL�PRF�19500.

This test required for the following end-point measurements only:

Group B, subgroups 2 and 3 (JAN, JANTX, and JANTXV).

Group C, subgroup 2 and 6.

Group E, subgroup 1.