MIL-PRF-19500-504 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6283 And 2N6284, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon power Darlington transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/504F

TABLE II. Group E inspection (all quality levels) � for qualification and requalification only.

Inspection

Sample plan

Method

Conditions

45 devices

Subgroup 1

c=0

Temperature cycling

1051

Test condition C, 500 cycles.

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

End-point electrical

See table I, subgroup 2 herein.

measurements

Subgroup 2

45 devices

c=0

Test temperature = +125�C, VCB = 80 percent

Blocking life

1048

rated, T = 1,000 hours.

End-point electrical

See table I, subgroup 2 herein.

measurements

Subgroup 4

Thermal impedance curves

Sample size N/A

Subgroup 8

45 devices

c=0

Reverse voltage leakage

1033

Condition B.

stability