MIL-PRF-19500-504 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6283 And 2N6284, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon power Darlington transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/504F

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E�VII of MIL�PRF�19500 and as follows. Electrical measurements (end-points) shall be in

accordance with table I, subgroup 2 herein.

Subgroup

Method

Conditions

2036

Test condition A, weight = 10 lbs (4.54 Kg), t = 15s.

See 4.3.1, RθJC = 0.857�C/W (maximum).

3131

For solder die attach: VCE ≥ 10 V dc; TA ≤ +35�C, 6,000 cycles.

1037

For eutectic die attach: TA ≤ +35�C adjust PT to achieve TJ = +150�C minimum,

1026

VCE ≥ 10 V dc.

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table E�IX of MIL�PRF�19500 and as specified in table II herein. Electrical

measurements (end-points) shall be in accordance with table I, subgroup 2 herein.

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse response measurements. The conditions for pulse response measurement shall be as specified in