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MIL-PRF-19500-504 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6283 And 2N6284, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon power Darlington transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500.

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MIL�PRF�19500/504F

TABLE I. Group A inspection � Continued.

MIL�STD�750

Limit

Inspection 1/

Symbol

Unit

Method

Conditions

Min

Max

Subgroup 3

TA = +150�C

High temperature operation:

Collector to emitter

3041

5.0

mA dc

Bias condition A, VBE = 1.5 V dc

ICEX2

cutoff current

2N6058

VCE = 80 V dc

2N6059

VCE = 100 V dc

Collector to emitter

3071

2.0

V dc

IC = 10 A dc; IB = 40 mA dc;

VCE(sat)3

saturation voltage

pulsed (see 4.5.1)

TA = �55�C

Low temperature operation:

Forward-current

3076

200

VCE = 3 V dc; IC = 10 A dc;

hFE4

transfer ratio

pulsed (see 4.5.1)

Subgroup 4

Pulse response

�s

Turn-on time

2.0

(See figure 2); VCC = 30 V dc;

ton

IC = 10 A dc; IB = 40 mA dc

�s

Turn-off time

(See figure 2); VCC = 30 V dc;

toff

IC = 10 A dc; IB1 = IB2 = 40 mA dc

Magnitude of common

3306

VCE = 3 V dc; IC = 10 A dc;

|hfe|

emitter small-signal,

f = 1.0 MHz

short-circuit forward- current

transfer ratio

Small-signal, short-circuit

3206

700

hfe

VCE = 3 V dc, IC = 10 A dc;

forward-current transfer ratio

f = 1 kHz

Open-circuit output

3236

350

VCB = 10 V dc; IE = 0;

Cobo

100 kHz ≤ f ≤ 1 MHz

capacitance

See footnotes at end of table.