MIL-PRF-19500-504 Semiconductor Device, Transistor, Npn, Silicon, Power Darlington, Types 2N6283 And 2N6284, Jan, Jantx, And JantxvThis specification covers the performance requirements for NPN silicon power Darlington transistors. Three levels of product assurance are provided for each encapsulated device type as specified in MIL┬ûPRF┬û19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL�PRF�19500/504F

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL�PRF�19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as

specified in MIL�PRF�19500 and as follows:

�

The measurement current applied to forward bias the junction for measurement of VBE.

�

The collector current applied to the device under test during the heating period.

�

The duration of the applied heating power pulse.

�

Sample window time during which final VBE measurement is made.

tSW

3.4 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be

as specified in MIL�PRF�19500 and figure 1 (TO�204AA similar to TO�3).

3.4.1 Lead finish. The lead finish shall be solderable in accordance with MIL�STD�750, MIL�PRF�19500, and

herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition document (see

3.4.2 Polarity. The polarity of the device type shall be as shown on figure 1.

3.5 Marking. Marking shall be in accordance with MIL�PRF�19500.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

Qualification inspection (see 4.2).

Screening (see 4.3).

Conformance inspection (see 4.4 and tables I and II).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL�PRF�19500, and as

specified herein.

4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case

qualification was awarded to a prior revision of the specification sheet that did not request the performance of table II

tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on the first

inspection lot of this revision to maintain qualification.