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MIL-PRF-19500-534 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5002 And 2N5004, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/534G
* TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical
2071
*
examination 3/
Solderability 3/ 4/
2026
n = 15 leads, c = 0.
Resistance to solvents
1022
n = 15 devices, c = 0.
3/ 4/ 5/
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0.
Hermetic seal 4/ 6/
1071
n = 22 devices, c = 0.
Fine leak
Gross leak
Electrical measurements 4/
Table I, subgroup 2.
Bond strength 3/ 4/
2037
Precondition
TA = +250°C at t = 24 hours or
TA = +300°C at t = 2 hours
n = 11 wires, c = 0.
Decap internal visual (design
2075
n = 4 devices, c = 0.
verification) 4/
Subgroup 2
See 4.3.3.
3131
Thermal impedance 7/
°C/W
ZθJX
Breakdown voltage,
3011
80
V dc
Bias condition D, IC = 100 mA,
VBR(CEO)
collector to emitter
IB = 0, pulsed (see 4.5.1).
Collector to emitter cutoff
3041
1.0
µA dc
Bias condition C, VCE = 60 V dc,
ICES1
current
VBE = 0.
Collector to emitter cutoff
3041
1.0
mA dc
ICES2
Bias condition C, VCE = 100 V dc,
current
VBE = 0.
Collector to emitter cutoff
3041
50
µA dc
Bias condition D, VCE = 40 V dc,
ICEO
current
IB = 0.
Emitter to base cutoff current
3061
1.0
mA dc
Bias condition C, VEB = 4 V dc,
IEBO1
IC = 0.
Emitter to base cutoff current
3061
1.0
mA dc
Bias condition D, VEB = 5.5 V dc,
IEBO2
IC = 0.
See footnotes at end of table.
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