MIL-PRF-19500-534 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5002 And 2N5004, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/534G

TABLE I. Group A inspection. - Continued.

Symbol

Unit

Inspection 1/

MIL-STD-750

Limits

Method

Conditions

Min

Max

Subgroup 5 - Continued.

Safe operating area

3053

TC = +25�C, RBB1 = 10Ω,

(unclamped inductive)

RBB2 = 100Ω, L = 0.3 mH,

RL = 0.1Ω, VCC = 10 V dc,

VBB1 = 10 V dc, VBB2 = 4 V dc,

ICM = 10 A dc (see figure 7).

End-point electrical

See subgroup 2 of table I.

measurements

Subgroups 6 and 7

Not applicable

1/ For sampling plan, see MIL-PRF-19500.

2/ For resubmission of failed in subgroup 1 of table I, double the sample size of the failed test or sequence of tests.

A failure in table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon

submission.

3/ Separate samples may be used.

4/ Not required for JANS devices.

5/ Not required for laser marked devices.

6/ This hermetic seal test is an end-point to temp-cycling in addition to electrical measurements.

7/ This test is required for the following end-point measurements only:

Group B, subgroups 3, 4, and 5 (JANS).

Group B, step 1 (JAN, JANTX, and JANTXV).

Group C, subgroups 2 and 6.

Group E, subgroups 1 and 2.