MIL-PRF-19500-534 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5002 And 2N5004, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/534G

* 4.3 Screening. Screening shall be in accordance with table E-IV of MIL-PRF-19500 and as specified herein. The

following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I

herein shall not be acceptable.

Screen (see table E-IV

Measurement

of MIL-PRF-19500)

JANS level

JANTX and JANTXV levels

(1) 3c

Thermal impedance method 3131 of

MIL-STD-750 (see 4.3.3)

ICES1 and hFE2

Not applicable

ICES1 and hFE2

ĆICES1 = 100 percent or 100 nA,

whichever is greater;

ĆhFE2 = �20 percent

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

ĆICES1 = +100 percent of initial value

or 100 nA, whichever is greater.

ĆhFE2 = �20 percent

(1) Shall be performed anytime after temperature cycling, screen 3a; TX and TXV do not need to be repeated in

screening requirements.

4.3.1 Screening (JANHC or JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a

minimum, die shall be 100-percent probed to ensure compliance with table 1, subgroup 2. Burn-in duration for lot

acceptance for the JANKC level follows JANS requirements. Burn-in duration for lot acceptance for the JANHC level

follows JANTX requirements.

4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be

applied to achieve TJ = +135�C minimum using a minimum PD = 75 percent of PT maximum, TA ambient rated as

defined in 1.3. TA ≤ 35�C. With approval of the qualifying activity and preparing activity, alternate burn-in criteria

(hours, bias conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A

justification demonstrating equivalence is required. In addition, the manufacturing site s burn-in data and

performance history will be essential criteria for burn-in modification approval. Use method 3100 of MIL-STD-750 to

measure TJ.

4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with

method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where

appropriate). The thermal impedance limit used in screen 3c of 4.3 and the subgroup 2 of table I herein shall comply

with the thermal impedance graph in figure 4 (less than or equal to the curve value at the same tH time) and shall be

less than the process determined statistical maximum limit as outlined in method 3131. See table III, subgroup 4

herein.