MIL-PRF-19500-534 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5002 And 2N5004, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/534G

* 4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANKC types shall include

the group D tests specified in table II herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other

subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effects to

the fluence profile.

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein; delta measurements shall be in accordance with the

applicable steps of 4.5.3.

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 Inspection conditions. Unless otherwise specified herein, all inspections shall be conducted at a case

temperature (TC) of +25�C.

4.5.3 Delta requirements. Delta requirements shall be as specified below: (1) (2) (3) (4) (5)

Steps

Inspection

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Collector to emitter

3041

100 percent of initial

VCE = 60 V dc

ĆICES1

cutoff current

value or 100 nA,

whichever is greater.

Forward - current

3076

�20 percent change

ĆhFE2

IC = 2.5 A dc

transfer ratio

from initial reading

VCE = 5 V dc, pulsed (see 4.5.1)

(1) The delta measurements for table E-VIa (JANS) of MIL-PRF-19500 are as follows:

a. Subgroup 3, see 4.5.3 herein, steps 1 and 2.

b. Subgroup 4, see 4.5.3 herein, steps 1 and 2.

(2) The delta measurements for group B, (see 4.4.2.2 herein, JAN, JANTX, and JANTXV) are as follows: After

each step in 4.4.2.2, see 4.5.3 herein, steps 1 and 2.

(3) The delta measurements for table E-VII of MIL-PRF-19500 are as follows: Subgroup 6, see 4.5.3 herein,

steps 1 and 2.

(4) Devices which exceed the table I limits for this test shall not be accepted.

(5) Group E, table III herein, subgroups 1 and 2, see 4.5.3 herein, steps 1 and 2.