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MIL-PRF-19500-534 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5002 And 2N5004, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/534G
1.
Die size
.120 inch (3.05 mm) x .120 inch (3.05 mm) ±.002 inch (±0.05 mm).
2.
Die thickness
.014 inch (0.35 mm) ±.0015 inch nominal (±0.04 mm).
3.
Top metal
Aluminum, 54,000Å minimum, 60,000Å nominal.
4.
Back metal
Gold 6,000Å minimum, 8,000Å nominal.
5.
Backside
Collector
6.
Bonding pad
B = .060 x .012 inch (1.5 mm x 0.30 mm).
E = .050 x .012 inch (1.27 mm x 0.30 mm).
FIGURE 2. JANHC and JANKC (B-version) die dimensions.
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