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MIL-PRF-19500-534 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5002 And 2N5004, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/534G

TABLE I. Group A inspection. - Continued.

Symbol

Unit

Inspection 1/

MIL-STD-750

Limits

Method

Conditions

Min

Max

Subgroup 4

Common-emitter, small-

3206

VCE = 5 V dc, IC = 100 mA dc,

hfe

signal, short-circuit,

f = 1 kHz.

forward-current transfer

ratio

2N5002

2N5004

Magnitude of common-

3306

VCE = 5 V dc, IC = 500 mA dc,

│hfe│

emitter, small-signal

f = 10 MHz.

short-circuit, forward-

current transfer ratio

2N5002

2N5004

Open-circuit output

3236

250

Cobo

VCB = 10 V dc, IE = 0,

capacitance

f = 1 MHz.

Switching time

0.5

�s

IC = 5 A dc, IB1 = 500 mA dc,

ton

1.4

�s

IB2 = -500 mA dc,

0.5

�s

VBE(off) = 3.7 V,

1.5

�s

RL = 6Ω, (see figure 5).

toff

Subgroup 5

Safe operating area (dc)

3051

Pre-pulse condition for each test:

VCE = 0, IC = 0, TC = +25�C.

Pulse condition for each test,

tp = 1 sec. 1 cycle

TC = +25�C, (see figure 6).

Test #1

VCE = 12 V dc, IC = 5 A dc.

Test #2

VCE = 32 V dc, IC = 1.7 A dc.

Test #3

VCE = 80 V dc, IC = 100 mA dc.

See footnotes at end of table.