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MIL-PRF-19500-534 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5002 And 2N5004, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/534G
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein. If alternate screening is being performed in accordance with E.5.3.1d of MIL-PRF-19500, a sample
of screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only
(table E-VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in
accordance with 4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of
MIL-PRF-19500 and table I herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements
(end-points) shall be in accordance with table I, subgroup 2. Delta requirements shall be in accordance with the
steps of 4.5.3 herein as specified in the notes for 4.5.3. See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B
testing. Electrical measurements (end-points) for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and
shall be in accordance with table I, subgroup 2. Delta requirements shall be in accordance with the steps of 4.5.3
herein as specified in the notes for 4.5.3.
4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
VCB = 10 V dc minimum, PT = 2.5 W minimum, TA = +25°C ±3°C; ton = toff = 3
B4
1037
minutes minimum for 2,000 cycles. No heat sink or forced-air cooling on devices
shall be permitted.
VCB = 20 V dc, TJ = +275°C minimum for 96 hours; adjust the chosen TA and PT to give
B5
1027
an average lot TJ = +275°C. Marking legibility requirements shall not apply.
B6
3131
See 4.3.3 herein.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic
failures during CI shall be analyzed to the extent possible to identify root cause and corrective action.
Step
Method
Condition
Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be applied to
1
1026
achieve TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated
PT as defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the
test time decreased as long as the devices are stressed for a total of 45,000 device
hours minimum, and the actual time of test is at least 340 hours.
2
1048
Blocking life, TA = +150°C, VCB = 80 percent of rated voltage, 48 hours minimum.
n = 45 devices, c = 0.
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
3
1032
7



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