MIL-PRF-19500-534 Semiconductor Device, Transistor, Npn, Silicon, Power, Types 2N5002 And 2N5004, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcb, Jankcb, Jankcbm, Jankcbd, Jankcbp, Jankcbl, Jankcbr, Jankcbf, Jankcbg, And JankcbhThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance for each unencapsulated device type die. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/534G

TABLE III. Group E inspection (all quality levels) - for qualification or re-qualification only.

MIL-STD-750

Qualification

Inspection

Method

Conditions

Subgroup 1

45 devices

c=0

1051

Test condition C, 500 cycles.

Temperature cycling

(air to air)

1071

Hermetic seal

Fine leak

Gross leak

See table I, subgroup 2 and 4.5.3 herein.

Electrical measurements

45 devices

Subgroup 2

c=0

1037

Intermittent life

Intermittent operation life: VCB = 10 V dc, 6,000 cycles.

Adjust device current, or power, to achieve a minimum

ĆTJ of +100�C.

Electrical measurements

See table I, subgroup 2 and 4.5.3 herein.

Subgroup 4

Thermal impedance curves

See table E-IX of MIL-PRF-19500, group E, subgroup 4.

Subgroup 5

Not applicable

Subgroup 6

11 devices

Electrostatic discharge (ESD)

1020

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.