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MIL-PRF-19500-557 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon Types 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, And 2N6802U Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/557L
4.3 Screening (JANS, JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
Measurement
table E-IV of
(1) (2)
JANS level
JANTX and JANTXV levels
(3)
Gate stress test (see 4.3.2)
Gate stress test (see 4.3.2).
(3) (4)
Unclamped inductive switching, method 3470
Unclamped inductive switching, method 3470
of MIL-STD-750 (see 4.3.3), optional
of MIL-STD-750 (see 4.3.3), optional
(3) 3c
Method 3161 of MIL-STD-750 (see 4.3.4)
Method 3161 of MIL-STD-750 (see 4.3.4)
9
IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I
Subgroup 2 of table I herein
herein
10
Method 1042 of MIL-STD-750, test condition
Method 1042 of MIL-STD-750, test condition
B
B
11
IGSSF1, IGSSR1, IDSS1, rDS(on)1,VGS(TH)1,
IGSSF1, IGSSR1, IDSS1, rDS(on)1,VGS(TH)1
Subgroup 2 of table I herein;
Subgroup 2 of table I herein.
ĆIGSSF1 = ± 20 nA dc or ±100 percent of
initial value, whichever is greater.
ĆIGSSR1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
ĆIDSS1 = ±25 µA dc or ±100 percent of
initial value, whichever is greater.
12
Method 1042 of MIL-STD-750, test condition
Method 1042 of MIL-STD-750, test condition
A, t = 240 hours
A
13
Subgroups 2 and 3 of table I herein
Subgroup 2 of table I herein
ĆIGSSF1 = ±20 nA dc or ±100 percent of
ĆIGSSF1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆIGSSR1 = ±20 nA dc or ±100 percent of
ĆIGSSR1 = ±20 nA dc or ±100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆIDSS1 = ±25 µA dc or ±100 percent of
ĆIDSS1 = ±25 µA dc or ±100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆrDS(on)1 = ±20 percent of initial value
ĆrDS(on)1 = ±20 percent of initial value
ĆVGS(TH)1= ±20 percent of initial value
ĆVGS(TH)1= ±20 percent of initial value
(1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1 are measured.
(2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1 shall be invoked.
(3) Shall be performed anytime after temperature cycling, screen 3a. JANTX and JANTXV levels do not need to
be repeated in screening requirements.
(4) This test is optional in screening if performed in table I, subgroup 5.
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