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MIL-PRF-19500-557 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon Types 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, And 2N6802U Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/557L
* TABLE I. Group A inspection - Continued.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 2 - continued
*
Forward voltage
4011
Pulsed method, (see 4.5.1), ID =
VSD
(source drain diode)
ID1, VGS = 0 V dc
1.5
V
2N6796, 2N6796U
1.4
V
2N6798, 2N6798U
1.4
V
2N6800, 2N6800U
2N6802, 2N6802U
1.4
V
Subgroup 3
TC = TJ = +125°C
High-temperature
operation:
± 200
Gate current
3411
nA dc
VGS = +20 V dc and -20 V dc,
IGSS2
bias condition C, VDS = 0
Drain current
3413
0.25
mA dc
VGS = 0 V dc, bias condition C,
IDSS2
VDS = 80 percent of rated VDS
VDS ≥ VGS, ID = 0.25 mA dc
Gate to source
3403
1.0
V dc
VGS(TH)2
voltage (thresholds)
Static drain to source
3421
VGS = 10 V dc, pulsed (see 4.5.1),
rDS(on)3
on-state resistance
ID = ID2
2N6796, 2N6796U
0.35
ohm
2N6798, 2N6798U
0.75
ohm
2N6800, 2N6800U
2.40
ohm
2N6802, 2N6802U
3.50
ohm
TC = TJ = -55°C
Low-temperature
operation:
VDS ≥ VGS, ID = 0.25 mA dc
Gate to source
3403
5.0
V dc
VGS(TH)3
voltage (threshold)
Subgroup 4
Switching time test
3472
ID = rated ID1 (see 1.3), VGS = +10
V dc, RG = 7.5Ω
Turn-on delay time
td(on)
2N6796, 2N6796U
30
ns
VDD = 30 V dc
2N6798, 2N6798U
30
ns
VDD = 77 V dc
2N6800, 2N6800U
30
ns
VDD = 176 V dc
2N6802, 2N6802U
30
ns
VDD = 225 V dc
See footnotes at end of table.
14



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