MIL-PRF-19500-557 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon Types 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, And 2N6802U Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/557L

2N6796

2N6798

2N6800 and 2N6802

Inch

Inch mm

.016

0.41

| .026

0.66

| .106

2.69

.018

0.46

| .031

0.79

| .116

2.95

.019

0.48

| .033

0.84

| .148

3.76

.0187

0.475

| .034

0.86

| .180

4.57

.025

0.64

| .041

1.04

| .181

4.60

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Unless otherwise specified, tolerance is �.005 inch (�0.13 mm).

4. The physical characteristics of the die are: the back metals are chromium, nickel, and

silver. The top metal is aluminum and the back contact is the drain.

5. Die thickness is .0187 inch (0.475 mm).

6. Dimensions are in accordance with ASME Y14.5M.

FIGURE 3. JANHCA and JANKCA die dimensions.