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MIL-PRF-19500-557 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon Types 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, And 2N6802U Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/557L
* TABLE I. Group A inspection.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
2071
Visual and mechanical
inspection
Subgroup 2
°C/W
Thermal impedance 2/
See 4.3.4
3161
ZθJC
Breakdown voltage,
3407
VGS = 0 V dc, ID = 1.0 mA dc,
V(BR)DSS
drain to source
bias condition C
2N6796, 2N6796U
100
V dc
2N6798, 2N6798U
200
V dc
2N6800, 2N6800U
400
V dc
2N6802, 2N6802U
500
V dc
VDS ≥ VGS
Gate to source
3403
2.0
4.0
V dc
VGS(TH)1
voltage (threshold)
ID = 0.25 mA dc
± 100
Gate current
3411
nA dc
VGS = +20 V dc and -20 V dc,
IGSSF1
bias condition C, VDS = 0
± 100
Gate current
3411
nA dc
VGS = +20 V dc and -20 V dc,
IGSSR1
bias condition C, VDS = 0
µA dc
Drain current
3413
25
VGS = 0 V dc, bias condition C,
IDSS1
VDS = 80 percent of rated VDS
Static drain to source
3421
VGS = 10 V dc, condition A,
rDS(on)1
on-state resistance
pulsed (see 4.5.1), ID = ID2
2N6796, 2N6796U
0.18
ohm
2N6798, 2N6798U
0.40
ohm
2N6800, 2N6800U
1.00
ohm
2N6802, 2N6802U
1.50
ohm
Static drain to source
3421
VGS = 10 V dc, condition A,
rDS(on)2
on-state resistance
pulsed (see 4.5.1), ID = ID1
2N6796, 2N6796U
0.195
ohm
2N6798, 2N6798U
0.420
ohm
2N6800, 2N6800U
1.100
ohm
2N6802, 2N6802U
1.600
ohm
See footnotes at end of table.
13



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