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MIL-PRF-19500-557 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon Types 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, And 2N6802U Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/557L
Dimensions - 2N6796
Dimensions - 2N6798
Ltr
Inches
Millimeters
Inches
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
A
.181
.185
4.60
4.70
.179
.183
4.55
4.65
B
.116
.120
2.95
3.05
.114
.118
2.89
2.99
C
.032
.034
.81
.86
.028
.030
.71
.76
D
.017
.019
.43
.48
.018
.020
.46
.51
E
.024
.026
.61
.66
.024
.026
.61
.66
F
.035
.037
.89
.94
.033
.036
.84
.91
NOTES:
1.  Dimensions are in inches.
2.  Millimeters are given for general information only.
±.
3.  Unless otherwise specified, tolerance is  ฀005 inch (0.13 mm).
4.  The physical characteristics of the die are: The back metals are chromium, nickel, and silver and
the back contact is the drain. The top metal is aluminum.
±.
5.  Die thickness is .015 inch (0.38 mm)  ฀001 inch (0.025 mm).
FIGURE 4. JANHCB and JANKCB (B-version) die dimensions for 2N6796, 2N6798.
5



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