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MIL-PRF-19500-557 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon Types 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, And 2N6802U Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/557L
Dimensions - 2N6800 and 2N6802
Ltr
Inches
Millimeters
Min
Max
Min
Max
A
.178
.182
4.52
4.62
B
.114
.118
2.89
2.99
C
.038
.040
.96
1.02
D
.038
.040
.96
1.02
E
.048
.051
1.22
1.30
F
.096
.100
2.44
2.54
NOTES:
1.  Dimensions are in inches.
2.  Millimeters are given for general information only.
±.
3.  Unless otherwise specified, tolerance is  ฀005 inch (0.13 mm).
4.  The physical characteristics of the die are: The back metals are Titanium, nickel, and silver and
the back contact is the drain. The top metal is aluminum.
±.
5.  Die thickness is .018 inch (0.46 mm)  ฀001 inch (0.025 mm).
FIGURE 5. JANHCC and JANKCC (C-version) die dimensions for 2N6800, 2N6802.
6



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