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MIL-PRF-19500-557 Semiconductor Device, Field Effect Transistor, N-Channel, Silicon Types 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, And 2N6802U Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for a N-channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type.

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MIL-PRF-19500/557L

TABLE II. Group E inspection (all quality levels) for qualification or re-qualification only.

Qualification

and large lot

MIL-STD-750

Inspection

quality

Method

Conditions

conformance

inspection

Subgroup 1

45 devices

c=0

Temperature cycling)

1051

Test condition G, 500 cycles

Hermetic seal

1071

Fine leak

Gross leak

See table I, subgroup 2

Electrical measurements

Subgroup 2 1/

45 devices

c=0

Steady-state reverse bias

1042

Condition A, 1,000 hours

See table I, subgroup 2

Electrical measurements

Steady-state gate bias

1042

Condition B, 1,000 hours

Electrical measurements

See table I, subgroup 2

Subgroup 4

sample size

N/A

Thermal impedance curves

See MIL-PRF-19500.

Subgroup 5

Barometric pressure

1001

2N6800, 2N6800U, 2N6802 and 2N6802U only

Subgroup 10

Commutating diode for safe

3476

Test conditions shall be derived by the

45 devices

operating area test procedure for

manufacturer

c=0

measuring dv/dt during reverse

recovery of power MOSFET

transistors or insulated gate bipolar

transistors

A separate sample for each test shall be pulled.