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MIL-PRF-19500-560 Semiconductor Device, Transistor, Npn, Silicon, Switching, Type 2N5339 And 2N5339U3, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcc, Jankcc, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And JankcchThis specification covers the performance requirements for NPN silicon switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/560L
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4.3.4 Dielectric withstanding voltage.
a.
Magnitude of test voltage....................................600 V dc.
b.
Duration of application of test voltage....................15 seconds (min).
c.
Points of application of test voltage.......................All leads to case (bunch connection).
d.
Method of connection.........................................Mechanical.
e.
Kilovolt-ampere rating of high voltage source..........1,200 V/1.0 mA (min).
f.
Maximum leakage current....................................1.0 mA.
g.
Voltage ramp up time....................................................500 V/second
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened
devices shall be submitted to and pass the requirements of subgroup 1 and 2, of table I herein, inspection only (table
E-VIB, group B, subgroup 1 is not required to be performed since solderability and resistance to solvents testing is
performed in subgroup 1 of table I herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of
MIL-PRF-19500 and table I herein. Electrical measurements (end-points) requirements shall be in accordance with
table I, subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA of MIL-PRF-19500 (JANS) and 4.4.2.1 herein. Electrical measurements (end-points)
shall be in accordance with table I, subgroup 2 herein. See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B
testing. Electrical measurements (end-points) requirements shall be in accordance with table I, subgroup 2 herein.
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4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
VCB = 10 V dc, adjust device current, or power, to
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B4
1037
achieve a minimum ĆTJ of +100°C.
B5
1027
(NOTE: If a failure occurs, resubmission shall be at the test conditions of the
original sample.) VCB = 10 V dc; PD ≥ 100 percent of rated PT (see 1.3).
Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500,
table E-VIA, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to
achieve TJ = +225°C minimum.
B5
2037
Test condition D.
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