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MIL-PRF-19500-560 Semiconductor Device, Transistor, Npn, Silicon, Switching, Type 2N5339 And 2N5339U3, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcc, Jankcc, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And JankcchThis specification covers the performance requirements for NPN silicon switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/560L
* TABLE I. Group A inspection.
MIL-STD-750
Limit
Symbol
Unit
Inspection 1/
Method
Conditions
Min
Max
Subgroup 1 2/
Visual and mechanical
2071
n = 45 devices, c = 0
examination 3/
Solderability 3/ 4/
2026
n = 15 leads, c = 0
Resistance to solvents
1022
n = 15 devices, c = 0
3/ 4/ 5/
Temp cycling 3/ 4/
1051
Test condition C, 25 cycles.
n = 22 devices, c = 0
Heremetic seal 4/
1071
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements
Table I, subgroup 2
4/
Bond strength 3/ 4/
2037
Test condition D,
*
Precondition
TA = +250°C at t = 24 hrs or
TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
Decap internal visual
2075
n = 4 device, c = 0
(design verification) 4/
Subgroup 2
°C/W
Thermal impedance
3131
See 4.3.3
ZθJX
Breakdown voltage,
3011
100
V dc
Bias condition D; IC = 50 mA dc; pulsed
V(BR)CEO
collector to emitter
(see 4.5.1)
µA dc
Collector to emitter cutoff
3041
100
Bias condition D; VCE = 100 V dc
ICEO
current
µA dc
Collector to emitter cutoff
3041
1
Bias condition A; VBE = 1.5 V dc;
ICEX1
current
VCE = 90 V dc
µA dc
Collector to base cutoff
3036
1
Bias condition D; VCB = 100 V dc
ICBO
current
See footnotes at end of table.
12



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