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MIL-PRF-19500-560 Semiconductor Device, Transistor, Npn, Silicon, Switching, Type 2N5339 And 2N5339U3, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcc, Jankcc, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And JankcchThis specification covers the performance requirements for NPN silicon switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/560L
Letter
Dimensions
Inches
Millimeters
Min
Max
Min
Max
A
.098
.102
2.49
2.59
C
.098
.102
2.49
2.59
NOTES:
1.  Dimensions are in inches.
2.  Millimeters are given for general information only.
3.  The physical characteristics of the die are:
Thickness:
.006 inch (0.15 mm) to .010 inch (0.25 mm).
Top metal:
Aluminum 25,000 Å minimum, 37,500 Å nominal.
Back metal:  Gold 1,500 Å minimum, 6,500 Å nominal.
Back side:
Collector.
4.  Unless otherwise specified, tolerance is ±.005 inch (0.13 mm).
5.  In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 3. Physical dimensions JANHC and JANKC B-version die dimensions.
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