MIL-PRF-19500-560 Semiconductor Device, Transistor, Npn, Silicon, Switching, Type 2N5339 And 2N5339U3, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcc, Jankcc, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And JankcchThis specification covers the performance requirements for NPN silicon switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14

MIL-PRF-19500/560L

TABLE III. Group E inspection (all quality levels) - for qualification and requalification only.

MIL-STD-750

Inspection

Qualification

Method

Conditions

45 devices

Subgroup 1

c=0

Temperature cycling

1051

Test condition C, 500 cycles.

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

Electrical measurements

See table I, subgroup 2 herein.

Subgroup 2

45 devices

c=0

Intermittent life

1037

VCB = 10 V dc, 6,000 cycles. Adjust device current, or

power, to achieve a minimum ĆTJ of +100�C.

Electrical measurements

See table I, subgroup 2 herein.

Subgroups 4

Thermal impedance

See MIL-PRF-19500.

curves

Subgroup 5

Not applicable

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.