MIL-PRF-19500-560 Semiconductor Device, Transistor, Npn, Silicon, Switching, Type 2N5339 And 2N5339U3, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcc, Jankcc, Jankccm, Jankccd, Jankccp, Jankccl, Jankccr, Jankccf, Jankccg, And JankcchThis specification covers the performance requirements for NPN silicon switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type as specified in MIL-PRF-19500. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANS and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/560L

NOTES:

1. The rise time (tr) of the applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, and the generator source

impedance shall be 50Ω.

2. Sampling oscilloscope: Zin ≥ 1 MΩ, Cin ≤ 20 pF, rise time ≤ 20 ns.

3. ton conditions: IC = 2 A, IB1 = 200 mA.

FIGURE 11. Saturated turn-on switching waveform and time test circuit.

NOTES:

1. The rise time (tr) of the applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent, and the generator source

impedance shall be 50Ω.

2. Sampling oscilloscope: Zin ≥ 1 MΩ, Cin ≤ 20 pF, rise time ≤ 20 ns.

3. ton conditions: IC = 2 A, IB1 = IB2 = 200 mA.

FIGURE 12. Saturated turn-off switching time waveform and test circuit.