The documentation and process conversion measures
INCH-POUND
necessary to comply with this document shall be
completed by 1 October 2014.
MIL-PRF-19500/590K
1 July 2014
SUPERSEDING
MIL-PRF-19500/590J
4 June 2012
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER,
1N6626 THROUGH 1N6631, 1N6626U THROUGH 1N6631U, 1N6626US THROUGH 1N6631US,
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor
power rectifier diode. Four levels of product assurance are provided for each device type as specified in
1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
1.3.1 Ratings applicable to all types. Ratings applicable to all part or identifying numbers (PIN). TSTG = -65°C to
+175°C. TJ = +150°C maximum.
1.3.2 Ratings applicable to individual types.
Col. 1
Col. 2
Col. 3
Col. 4
Col. 5
Col 6
Col. 7
Col. 8
Col. 9
Col. 10
Types
IOL
IO2
IFSM
Baro-
RθJL at
RθJEC
RθJX
at TA=+25°C
VRWM
at TL =
at
metric
trr
L = .375
+75°C
tp=
pressure
(6)
inch (9.52
8.3 ms
mm) (7)
(1) (4) (5)
(1) (2) (3)
°C/W
°C/W
°C/W
V dc
A
A
A(pk)
mm Hg
ns
1N6626, U, US
200
2.3
1.75
75
8
30
22
6.5
50
1N6627, U, US
400
2.3
1.75
75
8
30
22
6.5
50
1N6628, U, US
600
2.3
1.75
75
8
30
22
6.5
50
1N6629, U, US
800
1.8
1.40
75
33
50
22
6.5
50
1N6630, U, US
900
1.8
1.40
75
33
50
22
6.5
50
1N6631, U, US 1,000
1.8
1.40
60
33
60
22
6.5
50
See notes on next page.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil .
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