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MIL-PRF-19500-590 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, 1N6626 Through 1N6631, 1N6626U Through 1N6631U, 1N6626Us Through 1N6631Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in

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MIL-PRF-19500/590K
* TABLE I. Group A inspection.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
examination
Subgroup 2
°C/W
Thermal impedance
3101
See 4.3.1
ZθJX
Duty cycle ≤ 2 percent (pulsed)
Forward voltage
4011
VFM1
(see 4.5.1) tp = 8.3 ms (max).
1N6626, U, US
IFM = 4.0 A dc
1.5
V dc
1N6627, U, US
IFM = 4.0 A dc
1.5
V dc
1N6628, U, US
IFM = 4.0 A dc
1.5
V dc
1N6629, U, US
IFM = 3.0 A dc
1.7
V dc
1N6630, U, US
IFM = 3.0 A dc
1.7
V dc
1N6631, U, US
IFM = 2.0 A dc
1.95
V dc
Duty cycle ≤ 2 percent (pulsed)
Forward voltage
4011
VFM2
(see 4.5.1) tp = 8.3 ms (max).
1N6626, U, US
IFM = 2.0 A dc
1.35
V dc
1N6627, U, US
IFM = 2.0 A dc
1.35
V dc
1N6628, U, US
IFM = 2.0 A dc
1.35
V dc
1N6629, U, US
IFM = 1.4 A dc
1.40
V dc
1N6630, U, US
IFM = 1.4 A dc
1.40
V dc
1N6631, U, US
IFM = 1.4 A dc
1.60
V dc
µA
Reverse current leakage
4016
Col. 2
DC method; VR = rated VRWM
IR1
of 1.4
(col. 2 of 1.3.2); pulsed (see
IR = 50 µA dc pulsed (see 4.5.1)
Breakdown voltage
4022
110
V(BR1)
percen
t of col.
2 of
See footnote at end of table.
11



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