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MIL-PRF-19500-590 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, 1N6626 Through 1N6631, 1N6626U Through 1N6631U, 1N6626Us Through 1N6631Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in

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MIL-PRF-19500/590K
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-VII of MIL-PRF-19500. Electrical measurements (end-points) shall be in
accordance with table I, subgroup 2 herein. See table III for delta limits when applicable.
* 4.4.3.1 Group C inspection, appendix E, table E-VII of MIL-PRF-19500.
Subgroup
Method
Condition
-0°C to +100°C, 10 cycles.
C2
1056
-55°C to +175°C, 25 cycles.
C2
1051
*
C2
2036
Axial devices - Tension: Test condition A; weight = 20 pounds; t = 30 seconds.
Lead fatigue: Test condition E; weight 2 pounds. (not applicable to US devices)
*
C2
2038
US devices - Tension: Test condition A; weight = 20 pounds; t = 30 seconds.
RθJL (maximum) ≤ 22°C/W; L = .375 inch (9.53 mm). (See 4.3.1.)
C5
4081
For surface mount devices (US version), RθJEC ≤ 6.5°C/W.
IO = IO2 (rated see 1.3.2, col. 4) minimum. adjust IO to achieve the required TJ of
C6
1027
+125°C minimum. Apply VR = rated VRWM (see 1.3.2, col. 2), f = 50 - 60 Hz (see
4.5.3.1). For irradiated devices, include trr as an end-point measurement. Delta
trr shall not exceed 25 percent of initial reading.
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements
(end-points) shall be in accordance with table I, subgroup 2 herein. See table III for delta limits when applicable.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
4.5.2 Inspection conditions. Unless otherwise specified, all inspections shall be conducted at TA = room ambient
as defined in the general requirements of MIL-STD-750 (see 4.5).
4.5.3 Burn-in and life tests. These tests shall be conducted with a half-sine waveform of the specified peak
voltage impressed across the diode in the reverse direction followed by a half-sine waveform of the specified average
rectified current. The forward conduction angle of the rectified current shall be neither greater than 180 degrees, nor
less than 150 degrees.
4.5.3.1 Free air burn-in and life tests. The use of a current limiting or ballast resistor is permitted provided that
each DUT still sees the full IO (minimum) and that the minimum applied voltage, where applicable, is maintained
throughout the burn-in period. Use method 3100 of MIL-STD-750 to measure TJ. TJ = +115°C minimum to +150°C
maximum for screening and TJ = +125°C minimum for 4.4.3.1 life tests. Accelerated life test shall be TJ = +150°C
minimum.
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