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MIL-PRF-19500-590 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, 1N6626 Through 1N6631, 1N6626U Through 1N6631U, 1N6626Us Through 1N6631Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in

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MIL-PRF-19500/590K
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, tables E-VIA (JANS) and E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500 and
4.4.2.1 and 4.4.2.2 herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2
herein. Delta measurements shall be in accordance with table III herein.
4.4.2.1 Group B inspection, appendix E, table E-VIA (JANS) of MIL-PRF-19500. For B5, if a failure occurs,
resubmission shall be at the test conditions of the original sample.
Subgroup
Method
Condition
0°C to +100°C, 25 cycles.
B3
1056
-55°C to +175°C, 100 cycles.
B3
1051
B3
4066
IFSM = rated IFSM (see 1.3.2, col. 5); ten10 surges of 8.3 ms each at 1 minute
intervals, IO = 0, VRWM = 0.
IO = IO2 rated minimum (see 1.3.2, col. 4);
B4
1037
VR = rated VRWM (see 1.3.2, col. 2 and 4.5.3); 2,000 cycles.
IO = IO2 rated minimum (see 1.3.2, col. 4 and 4.5.3); adjust TA and or IO to achieve
B5
1027
TJ = +150°C minimum; f = 50 - 60 Hz; n = 45, c = 0; t = 1,000 hours. TA = +55°C
max. . Temporary leads may be added for surface mount devices. For irradiated
devices, include trr as an end-point measurement. Delta trr shall not exceed 60
percent of initial reading. With approval of the qualifying activity, alternate life test
criteria (hours, bias condition, TJ, mounting conditions) may be used.
RθJL (maximum) ≤ 22°C/W; L = .375 inch (9.53 mm). (See 4.3.1.)
B6
4081
For surface mount devices (US version), RθJEC ≤ 6.5°C/W.
Peak reverse power, PRM ≥ 318 W for square wave in accordance with method
B8
4065
4065 of MIL-STD-750 (PRM ≥ 500 W for half-sine wave). Test shall be
performed on each sublot; sampling plan n = 10, c = 0, end-points, see 4.4.2.
4.4.2.2 Group B inspection, appendix E, table E- VIB (JAN, JANTX, and JANTXV of MIL-PRF-19500).
Subgroup
Method
Condition
0°C to +100°C, 10 cycles.
B2
1056
-55°C to +175°C, 25 cycles.
B2
1051
IO = IO2 (rated see 1.3.2, col. 4) minimum, adjust IO to achieve the required TJ of
B3
1027
+125°C minimum. Apply VR = rated VRWM (see 1.3.2, col. 2), f = 50 - 60 Hz (see
4.5.3.1). For irradiated devices, include trr as an end-point measurement. Delta
trr shall not exceed 25 percent of initial reading.
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