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MIL-PRF-19500-590 Semiconductor Device, Diode, Silicon, Ultrafast Recovery, Power Rectifier, 1N6626 Through 1N6631, 1N6626U Through 1N6631U, 1N6626Us Through 1N6631Us, Jan, Jantx, Jantxv, And JansThis specification covers the performance requirements for a silicon, ultrafast recovery, semiconductor power rectifier diode. Four levels of product assurance are provided for each device type as specified in

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MIL-PRF-19500/590K
Dimensions
Ltr
1N6626U, US through 1N6631U, US
Inches
Millimeters
Min
Max
Min
Max
BL
.200
.225
5.08
5.72
BD
.137
.148
3.48
3.76
ECT
.019
.028
0.48
0.71
S
.003
0.08
NOTES:
1.  Dimensions are in inches.
2.  Millimeters are given for general information only.
3.  Dimensions are pre-solder dip.
4.  The "S" dimension is the minimum clearance of glass body to mounting surface on
all orientations.
5.  In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Physical dimension of surface mount.
4



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